| PART |
Description |
Maker |
| MC3419C-1L MC3419A-1L MC3419-1 MC3419-1L |
SUBSCRIBER LOOP INTERFACE CIRCUIT(SLIC) BIPOLASER-TRIMMED INTEGRATED CIRCUIT
From old datasheet system
SLIC,2-4 CONVERSION,BIPOLAR,DIP,18PIN,CERAMIC
|
Motorola, Inc
Motorola Semiconductor Products Inc
|
| THAT4305 |
Pre-trimmed Analog Engine庐 IC
|
List of Unclassifed Manufacturers
|
| MAX1458C/D MAX1458CAE MAX1458AAE-T |
1% Accurate, Digitally Trimmed Sensor Signal Conditioner
1%-Accurate / Digitally Trimmed Sensor Signal Conditioner
1%-Accurate, Digitally Trimmed Sensor Signal Conditioner
1%-Accurate, Digitally Trimmed Sensor Signal Conditioner
|
MAXIM INTEGRATED PRODUCTS INC
Maxim Integrated Products, Inc.
Maxim Integrated Produc...
|
| SP3843 |
Trimmed Oscillator Discharge Current for Precise Duty Cycle Control
|
TY Semiconductor Co., Ltd
|
| BTA16-600SW3G BTA16-600SW3 |
Triac, 3 Quadrant Internally Isolated, 10 mA I-GT, 16 A I-T(RMS)
600V 16 A, 10mA Igt 3 Quadrant Internally Isolated Triac
|
On Semiconductor
|
| 243PC15M 242PC60G 242PC100GS 242PC250G 242PC150GS |
Burst-Mode PON Controller With Integrated Monitoring 工业控制IC
Dual, Temperature-Controlled Resistors with Internally Calibrated Monitors 工业控制IC
Evaluation Kit for the DS1854, DS1857, DS1858, DS1859 Fiber Optic Monitor and Control Evaluation Kit 工业控制IC
Industrial Control IC 工业控制IC
|
Honeywell International, Inc.
|
| AGB3309 AGB3309S24Q1 AGB3309_REV_1.0 |
50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block
50 High Linearity Low Noise Internally Biased Wideband Gain Block
50蟹 High Linearity Low Noise Internally Biased Wideband Gain Block
50з High Linearity Low Noise Internally Biased Wideband Gain Block
From old datasheet system
|
ANADIGICS[ANADIGICS, Inc]
|
| STGD5NB120SZT4 STGD5NB120SZ STGD5NB120SZ-1 |
N-CHANNEL 5A -1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT
40 个字x 1 线5 x 7 点阵字符和光
N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT N沟道5A 1200伏的DPAK /像是iPak内部钳位PowerMESHIGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应
From old datasheet system
2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC39V5258 C395258 |
5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.2~5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC38V5694 C385964 MGFC38V5964 |
5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~ 6.4GHZ BAND 6W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
